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Pbn Substrate Tube Crucible Parts for The Semiconductor Equipment
  • Pbn Substrate Tube Crucible Parts for The Semiconductor Equipment
  • Pbn Substrate Tube Crucible Parts for The Semiconductor Equipment
  • Pbn Substrate Tube Crucible Parts for The Semiconductor Equipment
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Basic Info

Model No.:  RY-PBN-0004

Product Description Model NO.: RY-PBN-0004 Type: Solid Material: Ceramic Maximum Voltage: 20KV~100KV Certification: ISO9001, SGS Product: Hot Pressed Boron Nitride Transport Package: Carton Origin: China Application: Insulators, Electrical Winding Insulation, Insulating Varnish Chemistry: Pyrolytic Boron Nitride Thermal Rating: 900-2200 Classification: Hybrid Insulation Materials Color: White Item: Structure Ceramic, Pbn Crucible, Specification: 100-500cc HS Code: 8547100000 PBN substrate tube  crucible Parts for The Semiconductor Equipment Specifications LEC PBN Crucible 1. Extremly High Purity 2. High Temperature 3. Excellent Thermal Shock Resistance 4. Chemical Inertness

  Advantage Non-toxic High purity Low density Chemically inert Non-porous One of the highest dielectric strengths known Good thermal conductivity Tensile strength increases with temperature Excellent thermal shock resistance High oxidation resistance Negligible outgassing Advantageous anisotropy (electrical, mechanical, and thermal) It is produced in a hot pressed form and the resulting material properties are anisotropic relative to the press direction. In fact, the material properties can vary considerably depending on the direction or the grade of the material. Futhermore, it is easily machined into complex shapes using standard carbide tooling. The operation temperatures range from 900°C for oxidizing environments to 2200°C for inert environments.TECHNICAL PROPERTIES

Type

99BN

CBN

ABN

ZBN

Main Content

BN>99%

BN>98.5%

BN+AlN

BN+ZrO2

Binder

B2O3

CaB2O6

ALBO3

B2O3

Density    (g/cm3)

1.95-2.0

2.0-2.1

2.6

2.95

Flexural Strength    (Mpa)

30

100

200

200

Compressive Strength    (Mpa)

100

280

350

380

Electrical Resistivity    (ohm.cm)

>10^14

>10^13

>10^14

>10^12

Max. Working Temp.    (°C)
air

900

900

900

1000

Max. Working Temp.    (°C)

inert gas

2400

2400

2100

1800

Max. Working Temp.    (°C)
vacuum

2200

2200

1900

1800

Thermal Conductivity    (W/m.K)

20

35

50

30

Expansion Coefficient  25 - 1000 °C (10^-6/K)

1.5

2

4.5

2
Pbn Substrate Tube Crucible Parts for The Semiconductor Equipment

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